STW20NM50FD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STW20NM50FD

N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE)

STMicroelectronics 

STW20NM50FD

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

Rthj-amb Thermal Resistance Junction-ambient

Max

Tl

Maximum Lead Temperature For Soldering Purpose

0.585

30

300

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

Max Value

10

700

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

500

Breakdown Voltage

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

10

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±30V

±100

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

µA

µA

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 10A

Min.

3

Typ.

4

0.22

Max.

5

0.25

Unit

V

Ω

DYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 10A

9

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1380

pF

Coss

Output Capacitance

290

pF

Crss

Reverse Transfer

Capacitance

40

pF

Coss eq. (2) Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400V

130

pF

Rg

Gate Input Resistance

f=1 MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

2.8

Ω

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

2/8

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