STD1NB60 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD1NB60 Datasheet PDF : 6 Pages
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STD1NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 300 V ID = 0.5 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 480 V ID = 1 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 1 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 1 A VGS = 0
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 1 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
13
15
Max.
Unit
ns
ns
7
10
nC
2
nC
3.5
nC
Min.
Typ.
27
32
35
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
1
4
Unit
A
A
1.6
V
350
ns
825
nC
4.7
A
3/6
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