P8NM60 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

P8NM60

N-CHANNEL 600V 0.8OHM 5A DPAK MDMESH POWER MOSFET

STMicroelectronics 

Electrical ratings

1

Electrical ratings

STP8NM60, STD5NM60, STB8NM60

2/18

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

IDM(2)

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

PTOT

dv/dt(3)

Total dissipation at TC = 25 °C

Derating factor

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS

Value

TO-220

IPAK Unit

TO-220FP

D²PAK

DPAK

± 30

V

8

8(1)

5

A

5

5 (1)

3.1 (1) A

32

32 (1)

20 (1)

A

100

30

96

W

0.8

0.24

0.0.4 W/°C

15

V/ns

--

2500

--

V

-55 to 150

°C

Table 2. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Value

TO-220 IPAK

Unit

TO-220FP

D²PAK DPAK

1.25

1.3

4.16 °C/W

62.5

°C/W

300

°C

Table 3. Avalanche data

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, ID=IAS, VDD=50 V)

Value

Unit

2.5

A

200

mJ

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