K3054 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

K3054

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain Cut-off Current

IDSS

VDS = 50 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±7 V, VDS = 0 V

Gate to Source Cut-off Voltage

VGS(off) VDS = 3 V, ID = 1 µA

Forward Transfer Admittance

| yfs | VDS = 3 V, ID = 10 mA

Drain to Source On-state Resistance

RDS(on)1 VGS = 2.5 V, ID = 10 mA

RDS(on)2 VGS = 4.0 V, ID = 10 mA

Input Capacitance

Ciss

VDS = 3 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 3 V

Rise Time

tr

ID = 20 mA

Turn-off Delay Time

td(off)

VGS(on) = 3 V

Fall Time

tf

RG = 10 Ω, RL = 150 Ω

TEST CIRCUIT SWITCHING TIME

D.U.T.

RG

PG.

RG = 10 Ω

VGS

0

τ

τ = 1µ s

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

010 %

VGS(on)

ID

90 %

ID

Wave Form

0 10 %

td(on)

ID

tr

td(off)

90 %

90 %

10 %

tf

ton

toff

2SK3054

MIN. TYP. MAX. UNIT

1

µA

±5 µA

0.9 1.2 1.5 V

20 38

mS

22 40

Ω

14 20

Ω

8

pF

7

pF

3

pF

15

ns

100

ns

30

ns

35

ns

2

Data Sheet D14209EJ2V0DS00

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