3SK180 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

3SK180

High-Frequency General-Purpose Amplifier Applications

SANYO -> Panasonic 

Ordering number:ENN2129B

N-Channel Silicon MOSFET (Dual Gate)

3SK180

High-Frequency General-Purpose Amplifier

Applications

Applications

· FM tuners and VHF tuners.

Features

· High power gain and low noise figure.

· High forward transfer admittance.

Package Dimensions

unit:mm

2046A

[3SK180]

1.9

0.95 0.95

0.4

43

0.16

0 to 0.1

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate1-to-Source Voltage

Gate2-to-Source Voltage

Drain Current

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDS

VG1S

VG2S

ID

PD

Tch

Tstg

12

0.6

0.95 0.85

2.9

Conditions

1 : Drain

2 : Source

3 : Gate 1

4 : Gate 2

SANYO : CP4

Ratings

Unit

15 V

±7 V

±7 V

30 mA

200 mW

125 ˚C

–55 to +125 ˚C

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

Drain-to-Source Voltage

VDS VG1S=–4V, VG2S=0V, IDS=100µA

Gate1-to-Source Breakdown Voltage

V(BR)G1SS IG1=10µA, VDS=0, VG2S=0V

Gate2-to-Source Breakdown Voltage

V(BR)G2SS IG2=10µA, VDS=0, VG1S=0V

Gate1-to-Source Cutoff Voltage

VG1S(off) VDS=10V, VG2S=4V, ID=100µA

Gate2-to-Source Cutoff Voltage

VG2S(off) VDS=10V, VG1S=0V, ID=100µA

Gate1-to-Source Leakage Current

IG1SS VG1S=±5V, VG2S=VDS=0V

Gate2-to-Source Leakage Current

IG2SS VG2S=±5V, VG1S=VDS=0V

Zero-Gate Voltage Drain Current

IDSS VDS=10V, VG1S=0, VG2S=4V

* : The 3SK180 is classified by IDSS as follows : (unit : mA) 2.5 4 6.0 5.0 5 12.0 10.0 6 24.0

Marking : DJ

IDSS rank : 4, 5, 6

Ratings

Unit

min

typ

max

15

V

±7

V

±7

V

–3 V

–2.5 V

±50 nA

±50 nA

2.5*

24* mA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129–1/5

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