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Part Name
Description
2SK3233 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK3233
N-channel MOSFET high speed power switching, 500V, 5A
Hitachi -> Renesas Electronics
2SK3233 Datasheet PDF : 10 Pages
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2SK3233
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25
°
C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I
DR
(A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
200
100
50
Coss
20
10
Crss
5
0
50 100 150 200 250
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
20
I
D
= 5 A
V
GS
800
16
V
DD
= 100 V
600
250 V
400 V
12
V
DS
400
8
200
0
V
DD
= 400 V
4
250 V
100 V
0
10 20 30 40 50
Gate Charge Qg (nC)
1000
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 250 V
PW = 10
µ
s, duty < 1 %
R
G
=10
Ω
200
100
t
d(off)
50
tf
20
t d(on)
10
t r
0.1 0.3 1 3 10 30 100
Drain Current I
D
(A)
6
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