PMBTH10 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PMBTH10 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
NPN 1 GHz general purpose switching transistor
Product specification
PMBTH10
FEATURES
• Low cost
• High power gain.
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
PINNING
PIN
DESCRIPTION
Code: V30
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
VEBO
Ptot
hFE
Cre
Crb
fT
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
total power dissipation
DC current gain
collector-emitter feedback
capacitance
collector-base feedback
capacitance
transition frequency
rbCc
collector-base time constant
CONDITIONS
open emitter
open base
open collector
Ts = 45 °C (note 1)
VCE = 10 V; IC = 4 mA
VCB = 10 V; IE = 0; f = 1 MHz
VCB = 10 V; IE = 0; f = 1 MHz
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts = 45 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
60
−
MAX. UNIT
30
V
25
V
3
V
400 mW
−
0.7 pF
0.35 0.65 pF
650 −
MHz
−
9
ps
MIN.
−
−
−
−
−
−65
−
MAX.
30
25
3
40
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2
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