BFG67 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BFG67 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
noise figure
VCB = 5 V; IE = 0
IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V; f = 500 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
MIN.
−
60
−
−
−
−
−
TYP.
−
100
8
0.7
1.3
0.5
17
MAX.
50
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
−
10
−
dB
−
1.3
−
dB
−
1.7
−
dB
−
2.5
−
dB
−
3
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
=
10
log --(--1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
1998 Oct 02
4
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