BC846S View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC846S Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose double transistor
Product specification
BC846S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
Cc
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 0.5 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
110
−
−
−
−
100
TYP.
−
−
−
−
−
−
770
−
−
MAX. UNIT
15
nA
5
µA
100
nA
−
100
mV
300
mV
−
mV
1.5
pF
−
MHz
1999 Sep 01
3
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