BSP41 Просмотр технического описания (PDF) - Philips Electronics
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BSP41 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BSP41; BSP43
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Telephony and general industrial applications
• Thick and thin-film circuits.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BSP31; BSP32 and BSP33.
PINNING
PIN
1
2,4
3
base
collector
emitter
handbook, halfpage
4
DESCRIPTION
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSP41
BSP43
collector-emitter voltage
BSP41
BSP43
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
−
70
V
−
90
V
−
60
V
−
80
V
−
5
V
−
1
A
−
2
A
−
0.2
A
−
1.3
W
−65
+150
°C
−
150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 26
2
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