BSP41 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BSP41 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistors
Product specification
BSP41; BSP43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
93
K/W
12
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
fT
PARAMETER
CONDITIONS
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 5 V; note 1
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 50 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
30
100
50
−
−
−
−
100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
MAX.
100
50
100
−
300
−
0.25
0.5
1
1.2
−
UNIT
nA
µA
nA
V
V
V
V
MHz
1999 Apr 26
3
Share Link: 