BUL45F Просмотр технического описания (PDF) - ON Semiconductor
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BUL45F Datasheet PDF : 10 Pages
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BUL45 BUL45F
5
4 VCE
3
dyn 1 µs
2
dyn 3 µs
1
0
–1
–2
90% IB
–3
1 µs
–4
3 µs
–5 IB
0
1
2
3 TIM4 E 5
6
7
8
Figure 18. Dynamic Saturation Voltage Measurements
10
9 IC
8
7
90% IC
tfi
tsi
6
5 VCLAMP
4
3 IB
10% VCLAMP
90% IB1
tc
10% IC
2
1
0
0
1
2
3
4
5
6
7
8
TIME
Figure 19. Inductive Switching Measurements
+15 V
1 µF
150 Ω
3W
100 Ω
3W
MPF930
+10 V
MPF930
MTP8P10
100 µF
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
50 Ω
COMMON
500 µF
–Voff
MJE210
150 Ω
3W
RB2
MTP12N10
1 µF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
6
Motorola Bipolar Power Transistor Device Data
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