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74VHCT245AMTR Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
74VHCT245AMTR
ST-Microelectronics
STMicroelectronics 
74VHCT245AMTR Datasheet PDF : 13 Pages
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74VHCT245A
Table 8: Capacitive Characteristics
Test Condition
Value
Symbol
Parameter
CIN Input Capacitance
CI/O
Bus Input
Capacitance
CPD Power Dissipation
Capacitance
(note 1)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
6 10
10
10 pF
8
pF
18
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
Table 4: DYNAMIC SWITCHING CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
VOLP Dynamic Low
Voltage Quiet
5.0
VOLV Output (note 1, 2)
0.6 0.9
-0.9 -0.6
Dynamic High
VIHD Voltage Input
5.0
CL = 50 pF
2.0
V
(note 1, 3)
Dynamic Low
VILD Voltage Input
5.0
0.8
(note 1, 3)
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold
(VIHD), f=1MHz.
5/13

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