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CLP30-200B1(1999) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
CLP30-200B1
(Rev.:1999)
ST-Microelectronics
STMicroelectronics 
CLP30-200B1 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CLP30-200B1
Fig. 13 : Relative variation of switching-off current
versus RSENSE (between 3 and 10 ).
Fig. 14 : Relative variation of switching-on voltage
versus dV/dt with an external resistor of 3 .
ISWOFF [Rsense] / ISWOFF [4 ]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
4
6
8
10
Rsense ( )
Fig. 15 : Relative variation of internal reference
voltage versus junction temperature (ILG =1mA).
VREF [Tj°C] / VREF [25°C]
1.10
1.05
1.00
0.95
0.90
0.85
-40
-20
0
20
40
60
Tj (°C)
VSWON / VREF
1.12
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.1 0.3 1
3 10 30
dV/dt (V/µs)
100 300 1000
Fig. 16 : Capacitance (TIP/GND) versus applied
voltage (typical values).
C (pF)
70
50
30
20
10
1
23 5
10
20 30 50 100
VR (V)
Fig. 17 : Surge peak current versus overload
duration (maximum values).
ITSM(A)
10
8
6
4
2
t(s)
0
0.01
0.1
1
10
100
1000
10/11

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