SI3443DV Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
SI3443DV Datasheet PDF : 5 Pages
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Typical Characteristics
20
VGS = -4.5V
-3.5V
-3.0V
15
-2.5V
10
-2.0V
5
-1.5V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
ID = - 4A
1.4
VGS = - 4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
6
TA = -55oC
25oC
125oC
4
2
0
0.4
0.8
1.2
1.6
2
2.4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.6
VGS = -2.5V
1.4
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
0.8
0
4
8
12
16
20
- ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.25
0.2
0.15
0.1
0.05
0
1
ID = -2A
TA = 125oC
TA = 25oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
T = 125oC
25oC
-55oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si3443DV, REV A
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