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2SJ353

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ353

P-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

The 2SJ353 is a P-channel MOS FET of a vertical type and is

a switching element that can be directly driven by the output of an

IC operating at 5 V.

This product has a low ON resistance and superb switching

characteristics and is ideal for driving the actuators and DC/DC

converters.

FEATURES

• Radial taping supported

• Can be directly driven by output of 5-V IC

• Low ON resistance

RDS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A

RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A

PACKAGE DIMENSIONS (in mm)

7.0 MAX.

1.2

0.8 ±0.1

0.6 ±0.1

0.6 ±0.1

0.6 ±0.1

1.7 1.7

GD S

0.55 ±0.1

EQUIVALENT CIRCUIT

Drain (D)

Gate (G)

Gate

Internal

diode

protection

diode

PIN CONNECTIONS

Source (S) S: Source

D: Drain

G: Gate

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

VDSS

VGSS

ID(DC)

ID(pulse)

PT

Tch

Tstg

VGS = 0

VDS = 0

TEST CONDITIONS

PW ≤ 10 ms,

Duty cycle ≤ 1 %

RATING

–60

±20/+10

±1.5

±3.0

UNIT

V

V

A

A

1.0

W

150

˚C

–55 to +150

˚C

Document No. D11216EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

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