2SB1143 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SB1143

PNP/NPN Epitaxial Planar Silicon Transistor

SANYO -> Panasonic 

2SB1143/2SD1683

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

Symbol

Conditions

VCE(sat) IC=(–)2A, IB=(–)100mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC=(–)2A, IB=(–)100mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Ratings

Unit

min

typ

max

(–350) (–700) mV

190 500 mV

(–)0.94 (–)1.2 V

(–)60

V

(–)50

V

(–)6

V

(70)70

ns

(450)

ns

650

ns

(30)35

ns

No.2063–2/4

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