TDA8051T Просмотр технического описания (PDF) - Philips Electronics
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TDA8051T Datasheet PDF : 24 Pages
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Philips Semiconductors
QPSK receiver
Product specification
TDA8051
CHARACTERISTICS
Measured in application circuit with the following conditions: VCC = 5 V; Tamb = 25°C. All AC units are RMS values,
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Supplies
VCCA1
ICCA1
VCCA2
ICCA2
VCCA3
ICCA3
Vcc(o)
Icc(o)
VCCD
ICCD
VCC(tune)
analog supply voltage
analog supply current
analog supply voltage
analog supply current
analog supply voltage
analog supply current
output supply voltage
output supply current
digital supply voltage
digital supply current
tuning supply voltage
4.75
−
4.75
−
4.75
−
4.75
−
4.75
−
−
Low noise amplifier: Rs = 75 Ω/Ri = 75 Ω unless otherwise specified
VI(DC)
Vi
fi
Ri
Ci
RLLNA
NFLNA
Vleak(LO)
DC input level
internally set
−
input level
−30
input carrier frequency
44
input resistance
−
input capacitance
−
input return loss
−
noise figure
−
LO leakage on pin at LNA_IN fN × LO = 140 − 860 MHz;
−
pin LNA_OUT connected to
DEMOD_IN
fLO/2 = 70 − 130 MHz;
−
pin LNA_OUT connected to
DEMOD_IN
GLNA
Vo
∆Vo
IM3
LNA gain
output level
output flatness
3rd-order intermodulation
f = 100 MHz;
8
VI(LNA) = 0 dBmV
−
−20
in 1 MHz bandwidth;
−
VI(LNA) = 0 dBmV
44 to 70 MHz;
−
VI(LNA) = 0 dBmV
70 to 130 MHz;
−
VI(LNA) = 0 dBmV
2 carriers at +10 dBmV each −
at pin LNA_IN
at 103 to 105 MHz
5 5.25
23 −
5 5.25
18 −
5 5.25
29 −
5 5.25
17 −
5 5.25
13 −
− 30
0.85 −
−0
− 130
75 −
2.5 −
−15 −
7 11
− −15
−35 −30
10 −
− +10
0.25 0.5
0.50 −
1.3 1.5
− −60
V
mA
V
mA
V
mA
V
mA
V
mA
V
V
dBmV
MHz
Ω
pF
dB
dB
dBmV
dBmV
dB
dBmV
dB
dB
dB
dBc
1999 Aug 20
6
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