L6565D Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

L6565D

QUASI-RESONANT SMPS CONTROLLER

STMicroelectronics 

L6565

ELECTRICAL CHARACTERISTCS (continued)

(Tj = -25 to 125°C, VCC = 12V, Co = 1nF; unless otherwise specified)

Symbol

Parameter

Test Condition

GV Voltage Gain

Open loop

GB Gain-Bandwidth Product

ICOMP Source Current

VCOMP = 4V, VINV = 2.4 V

Sink Current

VCOMP = 4V, VINV = 2.6 V

VCOMP Upper Clamp Voltage

ISOURCE = 0.5 mA

Lower Clamp Voltage

ISINK = 0.5 mA

CURRENT SENSE COMPARATOR

ICS Input Bias Current

VCS = 0

td(H-L) Delay to Output

VCSx Current Sense Reference Clamp VCOMP = Upper clamp, VVFF = 0V

VCOMP = Upper clamp, VVFF = 1.5V

VCOMP = Upper clamp, VVFF = 3V

VCSdis Hiccup-mode OCP level

ZERO CURRENT DETECTOR/ SYNCHRONIZATION

VZCDH Upper Clamp Voltage

IZCD = 3mA

VZCDL Lower Clamp Voltage

IZCD = - 3mA

VZCDA Arming Voltage

(1)

(positive-going edge)

VZCDT Triggering Voltage

(negative-going edge)

IZCDb Input Bias Current

VZCD = 1 to 4.5 V

IZCDsrc Source Current Capability

IZCDsnk Sink Current Capability

VDIS Disable Threshold

IZCDr Restart Current After Disable

VZCD < VDIS, Vcc > Vccoff

TBLANK Blanking time after pin 7 high-to- VCOMP ≥ 3.2 V

low transition

VCOMP = 2.5 V

START TIMER

tSTART Start Timer period

GATE DRIVER

VOL Dropout Voltage

IGDsource = 200mA

IGDsource = 20mA

VOH

IGDsink = 200mA

IGDsink = 20mA

tf

Current Fall Time

tr

Current Rise Time

IGDoff IGD sink current

Vcc = 4 V, VGD = 1 V

(1) Parameters guaranteed by design, not tested in production.

Min.

60

-2

2.5

5

Typ.

80

1

-3.5

4.5

5.5

2.25

Max.

-5

2.55

Unit

dB

MHz

mA

mA

V

V

-0.05 -1

µA

200 450

ns

1.28 1.4

1.5

V

0.62 0.7 0.78

0

0.2

1.85 2.0

2.2

V

4.7

5.2

6.1

V

0.3 0.65

1

V

2.1

V

1.6

V

2

µA

-3

-10

mA

3

10

mA

150 200 250 mV

-70 -150 -230 µA

3.5

µs

18

250 400 550

µs

1.2

2

V

0.7

1

2

V

0.3

40

100

ns

40

100

ns

5

10

mA

4/17

Share Link: