BDX66C(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BDX66C
(Rev.:2012)

PNP SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX66 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

-VCEO(SUS)

Collector-Emitter Breakdown -IC=0.1 A

Voltage (*)

L=25mH

-ICEO

Collector Cutoff Current

-VCE=30 V

-VCE=40 V

-VCE=50 V

-VCE=60 V

-IEBO

Emitter Cutoff Current

-VBE=5 V

-ICBO

Collector-Base Cutoff

Current

-VCB=60 V

-VCB=40 V

TCASE=200°C

-VCB=80 V

-VCB=50 V

TCASE=200°C

-VCB=100 V

-VCB=60 V

TCASE=200°C

-VCB=120 V

-VCB=70 V

TCASE=200°C

-VCE=3 V

- IC=1 A

hFE

DC Current Gain

-VCE=3 V

- IC=10 A

-VCE=3 V

- IC=16 A

BDX66

60 -

-

BDX66A 80 -

BDX66B 100 -

-

-

V

BDX66C 120 -

-

BDX66

-

-

BDX66A -

BDX66B -

-

-

3 mA

BDX66C -

-

BDX66

BDX66A

BDX66B

-

- 5.0 mA

BDX66C

-

-

1

BDX66

-

-

5

-

-

1

BDX66A

-

-

5

-

-

1 mA

BDX66B

-

-

5

-

-

1

BDX66C

-

-

5

BDX66

BDX66A

BDX66B

- 2000 -

BDX66C

BDX66

BDX66A

BDX66B

1000

-

-

-

BDX66C

BDX66

BDX66A

BDX66B

- 1000 -

BDX66C

24/10/2012

COMSET SEMICONDUCTORS

2/4

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