BDX66 Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BDX66

PNP SILICON DARLINGTONS

Comset Semiconductors 

BDX 66, A, B, C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX66

BDX66A

BDX66B

BDX66C

Value

1.17

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

BDX66 -60 - -

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=-0.1 A, L=25mH

BDX66A -80 - -

V

BDX66B -100 - -

BDX66C -120 - -

VCE=-30 V

BDX66

-

-

ICEO

Collector Cutoff Current

VCE=-40 V

VCE=-50 V

BDX66A -

BDX66B -

-

-3 mA

-

VCE=-60 V

BDX66C - -

COMSET SEMICONDUCTORS

2/4

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