MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
14
90
13 @VDD=7.2V
12 VGG=3.5V
80
11 Pin=50mW
10
PO
70
9
8
60
7
6
ηT
50
5
4
40
3
2
ρin
30
1
0
20
130 140 150 160 170 180
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
@VDD=7.2V
VGG=3.5V
f=150MHz
PO
10
100
ηT
1
10
0.1
1
0.01
0.1
1
10
100
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
@VDD=7.2V
VGG=3.5V
f=175MHz
10
PO
100
ηT
1
10
0.1
1
0.01
0.1
1
10
100
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
16
100
@f=150MHz
14 VGG=3.5V
90
Pin=50mW
12
80
10
PO
70
8
60
6
ηT
50
4
40
2
30
0
20
3456789
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
16
100
@f=175MHz
14 VGG=3.5V
90
Pin=50mW
12
80
10
70
PO
8
60
6
ηT
50
4
40
2
30
0
20
3456789
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
@VDD=7.2V
Pin=50mW
f=150MHz
10
PO
100
ηT
1
10
0.1
1
0.5 1 1.5 2 2.5 3 3.5
GATE VOLTAGE VGG (V)
Nov. ´97