SB130 Просмотр технического описания (PDF) - Shanghai Sunrise Electronics
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SB130 Datasheet PDF : 1 Pages
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB120 THRU SB160
SCHOTTKY BARRIER
RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 20 TO 60V CURRENT: 1.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
DO - 41
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
SB
120
SB
130
SB
140
SB
150
SB
160
UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40
50
60
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
V
Maximum Average Forward Rectified Current
(9.5mm lead length,at TL=100oC
IF(AV)
1.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
40.0
A
Maximum Forward Voltage (at 1.0A DC)
VF
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
IR
Typical Junction Capacitance
(Note 1) CJ
0.5
0.7
V
1.0
mA
10.0
mA
110
pF
Typical Thermal Resistance
(Note 2) R (ja)
50
oC/W
Operating Junction Temperature
TJ
-65 to +125
-65 to +150
oC
Storage Temperature
TSTG
-65 to +150
oC
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
http://www.sse-diode.com
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