NTE2522 Просмотр технического описания (PDF) - NTE Electronics

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NTE2522

NTE2522 (NPN) & NTE2523 (PNP) Silicon complementary PNP transistor. High speed switch.

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2522

NTE2523

Cob

VCB = 10V, f = 1MHz

– 65 – pF

– 100 – pF

Collector–Emitter Saturation Voltage

NTE2522

NTE2523

VCE(sat)

IC = 4A, IB = 200mA

– 0.25 0.7 V

– 0.3 0.8 V

Base–Emitter Saturation Voltage

NTE2522

NTE2523

VBE(sat)

IC = 4A, IB = 200mA

– 0.95 1.8 V

– 0.95 1.3 V

Collector–Base Breakdown Voltage

NTE2522

NTE2523

V(BR)CBO

IC = 100µA, IE = 0

60 –

50 –

–V

–V

Collector–Emitter Breakdown Voltage

NTE2522

NTE2523

V(BR)CEO

IC = 1mA, RBE = ∞

45 –

40 –

–V

–V

Emitter–Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2522

NTE2523

V(BR)EBO IE = 10µA, IC = 0

ton VCC = 25V, VBE = 1V,

tstg

20IB1 = –20IB2 = IC = 4A,

Pulse Width = 20µs,

Duty Cucle ≤ 1%,

Note 1

5 – –V

– 50 100 ns

– 150 270 ns

– 120 220 ns

Turn–Off Time

toff

NTE2522

– 180 350 ns

NTE2523

– 150 300 ns

Note 1. For NTE2523, the polarity is reversed.

.256 (6.5)

.197 (5.0)

.090 (2.3)

.059 (1.5)

.275

(7.0)

BC E

.002 (0.5)

.295

(7.5)

.090 (2.3)

.002(0.5)

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