BF992 Просмотр технического описания (PDF) - Philips Electronics
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BF992 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
Tamb ≤ 60 °C; see Fig.2; note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
MIN.
−
−
−
−
−
−65
−
MAX.
20
40
±10
±10
200
+150
150
UNIT
V
mA
mA
mA
mW
°C
°C
handbook, halfpage
200
Ptot max
(mW)
100
MBL033
0
0
100
Tamb (oC)
200
Fig.2 Power derating curves.
1999 Aug 11
3
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