BF992 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BF992 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
handbIoDok,2h4alfpage
(mA)
20
MGE797
VG1-S = 0.2 V
16
0.1 V
0V
12
−0.1 V
8
−0.2 V
−0.3 V
4
−0.4 V
−0.5 V
−0.6 V
0
0
2
4
6
8
10
12
VDS (V)
VG2-S = 4 V; Tj = 25 °C.
Fig.3 Output characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
0
−1
MGE799
4 V3 V
VG2-S = 5 V
2V
1V
0V
0
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
handbook,3h0alfpage
|yfs|
(mS)
20
MGE798
5V
4V
3V
2V
30
handbook, halfpage
Yfs
(mS)
20
10
1V
VG2-S = 0 V
0
0
10
ID (mA)
20
10
0
−1
MGE800
VG2-S =
5V
4V
3V
2V
1V
0V
0
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
VDS = 10 V; Tj = 25 °C.
Fig.6 Forward transfer admittance as a function
of gate 1-source voltage; typical values.
1999 Aug 11
5
Share Link: 