BF901R Просмотр технического описания (PDF) - Philips Electronics
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производитель
BF901R Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon n-channel dual gate MOS-FETs
Product specification
BF901; BF901R
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
±IG1-SS
±IG2-SS
±V(BR)G1-SS
±V(BR)G2-SS
VG1-S(th)
VG2-S(th)
IDSX
gate 1 cut-off current
gate 2 cut-off current
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
CONDITIONS
MIN.
±VG1-S = 5 V; VG2-S = VDS = 0
−
±VG2-S = 5 V; VG1-S = VDS = 0
−
±IG1-SS = 10 mA; VG2-S = VDS = 0
6
±IG2-SS = 10 mA; VG1-S = VDS = 0
6
ID = 20 µA; VDS = 8 V; VG2-S = 4 V
0
ID = 20 µA; VDS = 8 V; VG1-S = 0
0.3
VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2
MAX. UNIT
50 nA
50 nA
20 V
20 V
0.7 V
1
V
18 mA
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Cos
Crs
F
transfer admittance
pulsed; Tj = 25 °C
25 28 35 mS
input capacitance at gate 1 f = 1 MHz
−
2.35 2.75 pF
input capacitance at gate 2 f = 1 MHz
−
1.2 −
pF
output capacitance
f = 1 MHz
−
1.4 −
pF
feedback capacitance
f = 1 MHz
−
25 −
fF
noise figure
f = 200 MHz; Gs = 2 mS; Bs = Bsopt.
−
0.7 −
dB
f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt. −
1.7 −
dB
November 1992
4
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