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NTE123AP

Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159)

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1) (Cont’d)

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Small–Signal Characteristics

VCE(sat)

VBE(sat)

IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

– – 0.4 V

– – 0.75 V

0.75 – 0.95 V

– – 1.2 V

Current Gain–Bandwidth Product

Collector–Base Capacitance

Emitter–Base Capacitance

Input Impedance

Voltage Feedback Ratio

Small–Signal Current Gain

Output Admittance

Switching Characteristics

fT

IC = 20mA, VCE = 10V, f = 100MHz 250 –

– MHz

Ccb VCB = 5V, IE = 0, f = 100kHz

– – 6.5 pF

Ceb VCB = 0.5V, IC = 0, f = 100kHz

– – 30 pF

hie IC = 1mA, VCE = 10V, f = 1kHz

1.0 – 15 kΩ

hre IC = 1mA, VCE = 10V, f = 1kHz

0.1 – 8.0 x 10–6

hfe IC = 1mA, VCE = 10V, f = 1kHz

40 – 500

hoe IC = 1mA, VCE = 10V, f = 1kHz

1.0 – 30 µmhos

Delay Time

Rise Time

Storage Time

Fall Time

td

VCC = 30V, VEB(off) = 2V,

tr

IC = 150mA, IB1 = 15mA

ts

VCC = 30V, IC = 150mA,

tf

IB1 = IB2 = 15mA

– – 15 ns

– – 20 ns

– – 225 ns

– – 30 ns

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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