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NTE2636

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

NTE Electronics 

NTE2636

Silicon NPN Transistor

Horizontal Deflection w/Internal Damper Diode

Features:

D High Breakdown Voltage: VCES = 1500V

D Built–In Damper Diode

D Isolated TO3PFM Type Package

Applications:

D TV/Character Display Horizontal Deflection Output

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A

Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A

Collector–Emitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Transfer Ratio

Collector–Emitter Saturation Voltage

V(BR)EBO IE = 500mA, IC = 0

ICES VCE = 1500V, RBE = 0

hFE VCE = 5V, IC = 1A

VCE(sat) IC = 6A, IB = 1.2A

6

–

–

V

–

– 500 µA

–

– 25

–

–

5

V

Base–Emitter Saturation Voltage

VBE(sat) IC = 6A, IB = 1.2A

–

– 1.5 V

Collector–Emitter Diode Forward Voltage VECF IF = 8A

–

Fall Time

tf

ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A, –

f H = 31.5kHz

– 2.0 V

– 0.5 µs

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