2N3553 Просмотр технического описания (PDF) - Philips Electronics
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2N3553 Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon planar epitaxial
overlay transistor
APPLICATIONS
• The 2N3553 is intended for use in VHF and UHF
transmitting applications.
PINNING - TO-39/3
PIN
1
2
3
DESCRIPTION
emitter
base
collector
Product specification
2N3553
DESCRIPTION
The device is a silicon NPN overlay transistor in a TO-39
metal package with the collector connected to the case.
handbook, halfpage
1
2
MBB199
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCEX
VCEO
ICM
Ptot
Tj
fT
PARAMETER
collector-emitter voltage
collector-emitter voltage
peak collector current
total power dissipation
junction temperature
transition frequency
RF performance
f
VCE
(MHz)
(V)
175
28
CONDITIONS
IC ≤ 200 mA; VBE = −1.5 V
open base; IC ≤ 200 mA
up to Tmb = 25 °C
IC = 125 mA; VCE = 28 V
MAX.
65
40
1.0
7.0
200
500
UNIT
V
V
A
W
°C
−
Po
Gp
η
(W)
(dB)
(%)
2.5
>10
>50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Oct 27
2
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