2N3553 Просмотр технического описания (PDF) - Philips Electronics
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2N3553 Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon planar epitaxial
overlay transistor
Product specification
2N3553
APPLICATION INFORMATION
RF performance at Tmb = 25 °C.
f
VCE
Po
Gp
η
(MHz)
(V)
(W)
(dB)
(%)
175
28
2.5
>10
>50
Ruggedness
The transistor is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases,
under the conditions: VCE = 28 V; f = 175 MHz; Tmb = 25 °C; Po = 2.5 W.
handbook, full pagewidth
input
50 Ω
+VCC
L3
C1
L1
DUT
(1)
C2
L2
C5
C3
L4
C4
output
50 Ω
MGC926
(1) The length of the external emitter wire is 1.6 mm.
Fig.6 Test circuit at 175 MHz.
1995 Oct 27
5
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