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Номер в каталоге
Компоненты Описание
BAS170W(2001) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
BAS170W
(Rev.:2001)
Silicon Schottky Diode
Infineon Technologies
BAS170W Datasheet PDF : 4 Pages
1
2
3
4
BAS170W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10
A
V
(BR)
70
-
-V
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
µA
-
-
0.1
-
-
10
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
mV
300 375 410
600 705 750
750 880 1000
AC Characteristics
Diode capacitance-
V
R
= 0 V,
f
= 1 MHz
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
Charge carrier life time
I
F
= 25 mA
Series inductance
C
T
-
1.5
2 pF
R
F
-
34
-
rr
-
- 100 ps
L
S
-
1.8
- nH
2
Aug-06-2001
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