DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE5637 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге
Компоненты Описание
производитель
NTE5637
NTE-Electronic
NTE Electronics 
NTE5637 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gate Trigger Current
IGT VD = 12V, Note 1
– 50 mA
Gate Trigger Voltage
VGT VD = 12V, All Quadrants
– 2.5 V
Holding Current
IH
RGK = 1k
– 50 mA
Critical Rate–of–Rise
dv/dt VD = 0.67 x VDRM, RGK = 1k, TJ = +125°C 500 –
– V/µs
Critical Rate–of–Rise, Off–State dv/dtc IT = 8A, di/dt = 3.55A/ms, TC = +85°C
5
– V/µs
Note 1. For either polarity of gate voltage with reference to electrode MT1.
.147 (3.75)
Dia Max
.420 (10.67)
Max
MT2
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]