BLF278 Просмотр технического описания (PDF) - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 4 Ω per section; optimum load impedance per section = 3.2 + j4.3 Ω (VDS = 50 V).
MODE OF OPERATION
f
VDS
(MHz)
(V)
IDQ
(A)
PL
(W)
CW, class-B
108
50
2 × 0.1
300
CW, class-C
108
50
VGS = 0
300
Gp
(dB)
>20
typ. 22
typ. 18
ηD
(%)
>60
typ. 70
typ. 80
Ruggedness in class-B operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the
conditions: VDS = 50 V; f = 108 MHz at rated load power.
1996 Oct 21
6
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