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NLX2G14(2009) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
NLX2G14
(Rev.:2009)
ON-Semiconductor
ON Semiconductor 
NLX2G14 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NLX2G14
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
TA = 555C
VCC
Test
TA = 25 5C
TA = +855C
to +1255C
(V)
Condition Min Typ Max Min Max Min Max Unit
tPLH,
tPHL
Propagation Delay,
Input A to Output Y
2.32.7 RL = 1 MW,
CL = 15 pF
1.8 4.3 7.4 1.8 8.1 1.8 9.1 ns
3.03.6 RL = 1 MW,
CL = 15 pF
1.5 3.3 5.0 1.5 5.5 1.5 6.5
RL = 500 W, 1.8 4.0 6.0 1.8 6.6 1.8 7.6
CL = 50 pF
4.55.5 RL = 1 MW,
CL = 15 pF
1.0 2.7 4.1 1.0 4.5 1.0 5.5
RL = 500 W, 1.2 3.2 4.9 1.2 5.4 1.2 6.4
CL = 50 pF
CIN
Input Capacitance
5.5
VIN = 0 V or
2.5
pF
VCC
CPD
Power Dissipation
3.3
10 MHz
11
pF
Capacitance (Note 6)
5.5
VIN = 0 V or
12.5
VCC
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
A or B
50%
tPLH
VCC
GND
tPHL
Y
50% VCC
Figure 3. Switching Waveforms
VCC
PULSE
GENERATOR
DUT
RT
CL
RL
RT = ZOUT of pulse generator (typically 50 W)
Figure 4. Test Circuit
http://onsemi.com
4

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