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MCZ33897BEF Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание
производитель
MCZ33897BEF
Freescale
Freescale Semiconductor 
MCZ33897BEF Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions of -40°C TA 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS (CONTINUED)
High-Voltage Rising Output Delay
200 Ω ≤ RL 3332 , 1.0 µs Load Time Constants 4.0 µs
Measured from TXD=VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V VBATT 26.5 V (14)
Min Time to VBUSMOD = 1.0 V, 6.0 V VBATT 26.5 V (14)
Max Time to VBUSMOD = 9.4 V, 12.0 V VBATT 26.5 V (14)
High-Voltage Falling Output Delay
200 Ω ≤ RL 3332 , 1.0 µs Load Time Constants 4.0 µs,
12.0 V VBATT 26.5 V
Measured from TXD=VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V (14)
Min Time to VBUSMOD = 3.7 V (14)
t DLYHVRO
µs
2.0
6.3
2.0
6.3
2.0
18
t DLYHVFO
µs
1.8
14
1.8
14
RECEIVER RXD
Receive Delay Time (5.0 V VBATT 26.5 V)
Awake
t RDLY
µs
0.2
1.0
Receive Delay Time (BUS Rising to RXD Falling, 5.0 V VBATT 26.5 V)
t RDLYSL
µs
Sleep
10
70
CNTL
CNTL Falling Delay Time (5.0 V VBATT 26.5 V) (33897/A/C/T only) t CNTLFDLY
300
Notes
14. VBUSMOD is the voltage at the BUSMOD node in Figure 7, page 15.
1000
ms
Analog Integrated Circuit Device Data
Freescale Semiconductor
33897/A/B/C/D/T
11

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