STPS10L60D Просмотр технического описания (PDF) - STMicroelectronics
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STPS10L60D Datasheet PDF : 5 Pages
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STPS10L60D/FP
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AC
TO-220FPAC
Value
1.6
4
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests conditions
Tj = 25°C
Tj = 125°C
VR = VRRM
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.014 IF2(RMS)
Min. Typ. Max. Unit
350 µA
65 95 mA
0.6
V
0.48 0.56
0.74
0.62 0.7
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
PF(av)(W)
8
7
δ = 0.05
6
5
4
3
2
1
0
01234
δ = 0.1
δ = 0.2
IF(av) (A)
5678
δ = 0.5
δ=1
T
δ=tp/T
tp
9 10 11 12
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
tp
0
0
25
Rth(j-a)=Rth(j-c)
TO-220AC
Rth(j-a)=15°C/W
TO-220FPAC
Tamb(°C)
50
75
100 125 150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
2/5
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