BSS138W Просмотр технического описания (PDF) - Fairchild Semiconductor
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BSS138W Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Characteristics.
10
I = 220mA
D
8
6
4
V = 8V
DS
V = 30V
DS
V = 25V
DS
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Qg. Gate Charge (nC)
Figure 9. Maximum Safe Operating Area.
101
100
10-1
10-2
10-3
10-1
R Limit
DS(on)
100μs
1ms
10ms
100ms
1s
DC
V =10V
GS
Single Pulse
Rthja=367oC/W
T = 25oC
a
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 11. Transient Thermal Response Curve.
1
Figure 8. Capacitance Characteristics.
100
f = 1MHZ
V = 0V
GS
80
60
C
ISS
40
C
OSS
20
C
RSS
0
0
10
20
30
40
50
V . Voltage Bias (V)
DS
Figure 10. Single Pulse Maximum
Power Dissipation.
5
Single Pulse
Rthja=367oC/W
4
T =25
A
3
2
1
0
1E-3
0.01
0.1
1
10
100
t1, Time(sec)
50%
30%
0.1
10%
5%
2%
D=1%
0.01
1E-4
Single Pulse
1E-3
0.01
Rthja(t)=r(t)*Rthja
Rthja=367oC/W
0.1
1
10
100
1000
t1, time(sec)
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
4
www.fairchildsemi.com
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