STPS30H100 Просмотр технического описания (PDF) - STMicroelectronics
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STPS30H100 Datasheet PDF : 10 Pages
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STPS30H100C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current (per
diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
14
12
δ = 0.1 δ = 0.2
10
δ = 0.05
δ = 0.5
8
6
4
2
IF(AV)(A)
0
0
2
4
6
8
10
12
14
δ=1
T
δ=tp/T
tp
16
18
20
IF(AV)(A)
18
16
14
12
10
Rth(j-a)=15°C/W
8
6
4
T
2
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
240
220
200
180
160
140
120
100
80
60
IM
40
20
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Zth(j-c)/Rth(j-c)
1.0
0.8
Ta=25°C
Ta=75°C
Ta=150°C
1E+0
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 6347 Rev 8
3/10
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