15N60L-T47-T Просмотр технического описания (PDF) - Unisonic Technologies
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15N60L-T47-T Datasheet PDF : 6 Pages
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15N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
15
A
60
A
Avalanche Current (Note 2)
IAR
6.4
A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
205
mJ
2.45
V/ns
TO-220
250
W
Power Dissipation
TO-220F1
TO-220F2
PD
54
W
52
W
TO-247
312
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=6.4A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-220F1
Junction to Ambient
TO-220F2
TO-247
TO-220
Junction to Case
TO-220F1
TO-220F2
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
40
0.5
2.3
2.4
0.4
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-485.H
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