2SK3212 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK3212 Datasheet PDF : 9 Pages
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2SK3212
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200
100
Coss
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
ID=5A
160
VDD = 100 V
50 V
16
25 V
120
12
VGS
80
8
40
V DD = 100 V
4
50 V
25 V VDS
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
300
t d(off)
100
tf
30
tr
10
3
1
0.1
t d(on)
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
10 30 100
Drain Current I D (A)
5
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