5N90G-TA3-R Просмотр технического описания (PDF) - Unisonic Technologies

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5N90G-TA3-R

5A, 900V N-CHANNEL POWER MOSFET

Unisonic Technologies 

5N90

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

900

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

Pulsed (Note 2)

ID

IDM

5

12

A

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

350

5.1

mJ

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

TO-220/TO-262/TO-263

125

Power Dissipation

TO-220F/TO-220F1

PD

47

W

TO-3P

240

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=28mH, IAS=5A, VDD= 50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

 THERMAL DATA

PARAMETER

TO-220/TO-220F

Junction to Ambient

TO-220F1/TO-262

TO-263

TO-3P

TO-220/TO-262

Junction to Case

TO-263

TO-220F/TO-220F1

TO-3P

SYMBOL

θJA

θJC

RATINGS

62.5

40

1

3.66

0.52

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 7

QW-R502-499.H

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