BC848B Просмотр технического описания (PDF) - Zetex => Diodes

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Компоненты Описание

производитель

BC848B

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

Zetex => Diodes 

ELECTRICAL CHARACTERISTICS (Continued)

BC846

BC848

BC850

BC847

BC849

PARAMETER

Static

Group VI

Forward

Current Ratio

Group A

Group B

Group C

Transition Frequency

Collector-Base

Capacitance

Emitter-Base

Capacitance

Noise Figure

Equivalent Noise

Voltage

SYMBOL

BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.

hFE Min 75 75 75 –

–

Typ 110 110 110 – –

Max 150 150 150 – –

IC=2mA, VCE=5V

hFE Typ 90 90 90 –

–

Min 110 110 110 – –

Typ 180 180 180 – –

Max 220 220 220 – –

IC=0.01mA, VCE=5V

IC=2mA, VCE=5V

Typ 120 120 120 – –

hFE

Typ

150

Min

200

Typ

290

Max

450

IC=100mA, VCE=5V

IC=0.01mA, VCE=5V

IC=2mA, VCE=5V

Typ 200 200 200 – –

hFE Typ. –

Min –

Typ –

Max –

270 270 270 270

420 420 420 420

500 500 500 500

800 800 800 800

IC=100mA, VCE=5V

IC=0.01mA, VCE=5V

IC=2mA, VCE=5V

Typ – – 400 – –

IC=100mA, VCE=5V

fT

Typ

300

MHz IC=10mA, VCE=5V

f=100MHz

Cobo Typ

2.5

Max

4.5

pF VCB=10V f=1MHz

pF

Cib0 Typ

9

pF VEB=0.5V f=1MHz

N

Typ 2

2

2

1.2 1

dB VCE = 5V, IC=200µA,

Max 10 10 10 4

4

dB RG=2kΩ, f=1kHz,

∆f=200Hz

Typ –

–

–

1.2 1

dB VCE = 5V, IC=200µA,

Max –

–

–

4

3

dB RG=2kΩ, f=30Hz to

15kHz at -3dB

points

en

Max. –

–

–

110 110 nV VCE= 5V, IC=200µA,

RG=2kΩ, f=10Hz to

50Hz at -3dB

points

Spice parameter data is available upon request for this device

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