BC856W(2008) Просмотр технического описания (PDF) - KEC
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BC856W Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
·For Complementary With NPN Type BC846W/847W/848W.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
BC856W
Collector-Base Voltage
BC857W
BC858W
VCBO
Collector-Emitter
Voltage
BC856W
BC857W
BC858W
VCEO
BC856W
Emitter-Base Voltage
BC857W
BC858W
VEBO
Collector Current
IC
Emitter Current
IE
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-80
-50
-30
-65
-45
-30
-5
-5
-5
-100
100
100
150
-55～150
UNIT
V
V
V
mA
mA
mW
℃
℃
BC856W/7W/8W
EPITAXIAL PLANAR PNP TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
Lot No.
MARK SPEC
TYPE BC856W-A
MARK
3A
BC856W-B
3B
BC857W-A
3E
BC857W-B
3F
BC857W-C
3G
BC858W-A
3J
BC858W-B
3K
BC858W-C
3L
2008. 8. 29
Revision No : 4
1/3
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