MAX17410GTM Просмотр технического описания (PDF) - Maxim Integrated

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MAX17410GTM

Dual-Phase, Quick-PWM Controller for IMVP6+ CPU Core Power Supplies

Maxim Integrated 

Dual-Phase, Quick-PWM Controller

for IMVP6+ CPU Core Power Supplies

ELECTRICAL CHARACTERISTICS (continued)

(Circuit of Figure 1, VIN = 10V, VCC = VDD = VSHDN = VPGDIN = VPSI = VILIM = 5V, VV3P3 = 3.3V, VDPRSLPVR = VDPRSTP = VGNDS =

VPGND_ = 0, CSPAVG = CSP_ = CSN_ = OUTS = 1.0000V, RFB = 3.57kΩ from FB to VPS, [D6–D0] = [0101000]; TA = -40°C to

+105°C, unless otherwise noted.)

PARAMETER

GATE DRIVERS

DH_ Gate-Driver On-Resistance

DL_ Gate-Driver On-Resistance

Internal BST_ Switch

On-Resistance

LOGIC AND I/O

Logic Input High Voltage

Logic Input Low Voltage

Low-Voltage Logic Input

High Voltage

SYMBOL

CONDITIONS

RON(DH_)

RON(DL_)

BST_ - LX_ forced

to 5V

High state (pullup)

Low state (pulldown)

High state (pullup)

Low state (pulldown)

RON(BST_) IBST_ = 10mA

VIH

VIL

VIHLV

SHDN, PGDIN, DPRSLPVR

SHDN, PGDIN, DPRSLPVR

PSI, D0–D6, DPRSTP

MIN

2.3

0.67

TYP

MAX UNITS

2.5



2.0

2.0



0.7

20



V

1.0

V

V

Low-Voltage Logic Input

Low Voltage

VILLV PSI, D0–D6, DPRSTP

0.33

V

Note 2: DC output accuracy specifications refer to the trip level of the error amplifier. The output voltage has a DC regulation higher

than the trip level by 50% of the output ripple. When pulse skipping, the output rises by approximately 1.5% when transition-

ing from continuous conduction to no load.

Note 3: On-time and minimum off-time specifications are measured from 50% to 50% at the DL_ and DH_ pins, with LX_ forced to

GND, BST_ forced to 5V, and a 500pF capacitor from DH_ to LX_ to simulate external MOSFET gate capacitance. Actual in-

circuit times might be different due to MOSFET switching speeds.s

10 ______________________________________________________________________________________

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