MBR2045CTF-E1 Просмотр технического описания (PDF) - BCD Semiconductor

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производитель

MBR2045CTF-E1

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

BCD Semiconductor 

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

Electrical Characteristics (Each Diode Leg)

Parameter

Condition

IF=10 A, TC=25oC

Maximum Instantaneous Forward IF=10 A, TC=125oC

Voltage Drop (Note 3)

IF=20 A, TC=25oC

IF=20 A, TC=125oC

Maximum Instantaneous Reverse Rated DC Voltage, TC=125oC

Current (Note 3)

Rated DC Voltage, TC=25oC

Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.

Symbol Typ

0.59

0.50

VF

0.71

0.67

5

IR

0.01

Data Sheet

MBR2045C

Max

Unit

0.65

0.57

V

0.84

0.72

15

mA

0.1

Jul. 2008 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

4

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