MC10EP101FAR2 Просмотр технического описания (PDF) - ON Semiconductor
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MC10EP101FAR2 Datasheet PDF : 8 Pages
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MC10EP101
DC CHARACTERISTICS, PECL (VCC = 5.0V ± 0.5V, VEE = 0V) (Note 9.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
(Note 7.)
45
57
75
45
58
75
45
59
75 mA
VOH
Output HIGH Voltage
(Note 8.)
3865 3940 4115 3930 4055 4180 3990 4115 4240 mV
VOL
Output LOW Voltage
(Note 8.)
3005 3190 3315 3005 3255 3380 3005 3315 3440 mV
VIH
Input HIGH Voltage Single Ended 3790
4115 3855
4180 3915
4240 mV
VIL
Input LOW Voltage Single Ended
3065
3390 3130
3455 3190
3515 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
–150
–150
–150
µA
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
7. VCC = 5.0V, VEE = 0V, all other pins floating.
8. All loading with 50 ohms to VCC –2.0 volts.
9. Input and output parameters vary 1:1 with VCC.
AC CHARACTERISTICS (VCC = 3.0V to 5.5V; VEE = 0V) or (VCC = 0V; VEE = –3.0V to –5.5V)
–40°C
25°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min
fmax
Maximum Toggle
Frequency (Note 10.)
3.0
3.0
tPLH,
tPHL
Propagation
Delay
D –>Q, Q 125 225 325 150 250 370 170
tSKEW Device Skew
Part–to–Part (Note 11.)
Q, Q
TBD
TBD
TBD
TBD
tJITTER Cycle–to–Cycle Jitter
TBD
TBD
tr
Output Rise and Fall Times
100 150 200 100 170 250 120
tf
(20% – 80%)
Q, Q
10. Fmax guaranteed for functionality only.
11. Skew is measured between outputs under identical transitions.
85°C
Typ
3.0
300
TBD
TBD
TBD
190
Max Unit
GHz
420 ps
ps
ps
270 ps
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