MRF5S9070NR1 Просмотр технического описания (PDF) - Motorola => Freescale

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MRF5S9070NR1

RF Power Field Effect Transistors

Motorola => Freescale 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc,

IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz

Power Gain

Gps

—

16.4

—

dB

Drain Efficiency

ηD

—

59

—

%

Input Return Loss

IRL

—

- 15

—

dB

Pout @ 1 dB Compression Point

(f = 880 MHz)

P1dB

—

71

—

W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 οhm system)

VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal

Power Gain

Gps

—

17

—

dB

Drain Efficiency

ηD

—

41

—

%

Error Vector Magnitude

EVM

—

1.35

—

%

Spectral Regrowth at 400 kHz Offset

SR1

—

- 66

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

- 81

—

dBc

RF Device Data

Freescale Semiconductor

MRF5S9070NR1 MRF5S9070MR1

3

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