PBSS4140S Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
PBSS4140S Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
40 V low VCEsat NPN transistor
Product specification
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth j-a
thermal resistance from junction to ambient in free air; note 1
150
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
ICEO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
fT
Cc
PARAMETER
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
CONDITIONS
VCB = 40 V; IC = 0
VCB = 40 V; IC = 0; Tamb = 150 °C
VCE = 30 V; IB = 0
VEB = 5 V; IC = 0
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA
VCE = 5 V; IC = 1 A
IC = 50 mA; VCE = 10 V; f = 100 MHz
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MIN.
−
−
−
−
300
300
200
−
−
−
−
−
−
150
−
TYP.
−
−
−
−
−
−
−
−
−
−
260
−
−
−
−
MAX.
100
50
100
100
−
900
−
200
250
500
<500
1.2
1.1
−
10
UNIT
nA
µA
nA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 27
3
Share Link: 