PBSS4140S Просмотр технического описания (PDF) - Philips Electronics
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PBSS4140S Datasheet PDF : 8 Pages
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Philips Semiconductors
40 V low VCEsat NPN transistor
Product specification
PBSS4140S
1000
handbook, halfpage
hFE
(1)
800
MHC077
600
(2)
400
(3)
200
010−1
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
10
handbook, halfpage
VBE
(V)
MHC078
1
(1)
(2)
(3)
10−1
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
10
MHC079
(1)
(2)
(3)
1
1
10
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
102
103
104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
102
handbook, halfpage
RCEsat
(Ω)
10
MHC080
1
10−1
10−1
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1)
(2)
(3)
10
102
103
104
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Nov 27
4
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